The Integrity of 28nm HK/MG nMOSFETs Probed with Drain Bias Stress

DOI

10.2991/icemie-16.2016.17How to use a DOI?

Keywords

impact ionization; leakage; DIBL; MOSFET; drain; trap; GCIP effect; high-k

Abstract

Adopting coupling drain bias stresses to probe the device integrity achieved the good consequences in the study of device leakage, interface state, and oxide trap causing some degradation effect in the tested devices and observed the GCIP effect at the higher drain stress conditions.

Copyright

© 2016, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Mu-Chun Wang
AU  - Shea-Jue Wang
AU  - Shuang-Yuan Chen
AU  - Chao-Nan Wei
AU  - Dai-Heng Wu
AU  - Jun-Wen Cai
AU  - Wen-How Lan
PY  - 2016/04
DA  - 2016/04
TI  - The Integrity of 28nm HK/MG nMOSFETs Probed with Drain Bias Stress
BT  - Proceedings of the 2016 International Conference on Electrical, Mechanical and Industrial Engineering
PB  - Atlantis Press
SP  - 67
EP  - 71
SN  - 2352-5401
UR  - https://doi.org/10.2991/icemie-16.2016.17
DO  - 10.2991/icemie-16.2016.17
ID  - Wang2016/04
ER  -