Analysis and Design of Charge Pump Configurations Based on Voltage Doubler for RFID

DOI

10.2991/wartia-16.2016.340How to use a DOI?

Keywords

Charge pump, Voltage doubler, RFID, Body effect.

Abstract

Charge pump is the configuration which can provide a voltage gain to program nonvolatile memory in radio frequency identification (RFID). In this paper, A complete theory of charge pump is presented, which shows that the influence of body effect on power dissipation and power efficiency is more and more obvious. To solve this problem, a voltage doubler applying new body biasing is proposed, which has been implemented under 0.18 CMOS process. The 10-stages proposed charge pump with pumping capacitor of 1pF at the clock of 2MHz can show a maximum power efficiency of 84%, in addition, it also can boost the voltage 1.8V input to 18.6V under 2 output current successfully.

Copyright

© 2016, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Mengxin Zhang
AU  - Jiancheng Li
AU  - Hongyi Wang
AU  - Cong Li
AU  - Li Yang
PY  - 2016/05
DA  - 2016/05
TI  - Analysis and Design of Charge Pump Configurations Based on Voltage Doubler for RFID
BT  - Proceedings of the 2016 2nd Workshop on Advanced Research and Technology in Industry Applications
PB  - Atlantis Press
SP  - 1714
EP  - 1719
SN  - 2352-5401
UR  - https://doi.org/10.2991/wartia-16.2016.340
DO  - 10.2991/wartia-16.2016.340
ID  - Zhang2016/05
ER  -