Experiments and Evaluation Based Pixellated CZT Semiconductor Detector

DOI

10.2991/icsem.2013.95How to use a DOI?

Keywords

Cadmium zinc telluride, semiconductor detector, Indium contacts, dark current

Abstract

Cadmium zinc telluride (CZT) material is one of the preferred materials for the fabrication of X-ray and gamma-ray detector. In this paper, it is presented an experimental detector system based on pixellated CZT semiconductor detector. At the same time, some research and design on the surface signal-readout method and the preamplifier circuitry is made. The signal coming from the CdZnTe material exposed to the radiation through the experiment is successfully required. The collection-efficiency between the electron and the hole in the anode is test when the different bias is applied in the pixellated CZT semiconductor detector. The parameter of the CZT detector and validate the responsive effect for the radiation is evaluated.The experiments and evaluation basis for the development of subsequent gamma spectrometer.

Copyright

© 2013, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Min Shen
AU  - Zhi-ling Tang
PY  - 2013/04
DA  - 2013/04
TI  - Experiments and Evaluation Based Pixellated CZT Semiconductor Detector
BT  - Proceedings of the 2nd International Conference On Systems Engineering and Modeling (ICSEM 2013)
PB  - Atlantis Press
SP  - 490
EP  - 493
SN  - 1951-6851
UR  - https://doi.org/10.2991/icsem.2013.95
DO  - 10.2991/icsem.2013.95
ID  - Shen2013/04
ER  -