The Preparation Methods of Gallium Nitride Powder

DOI

10.2991/icmse-16.2016.89How to use a DOI?

Keywords

Gallium nitride; Preparation methods; Nano powder

Abstract

Gallium nitride (GaN) has attracted much attention for a long time as a promising material for semiconductor device application in the transistors, visible light-emitting sources and high powder diodes. Many investigations are paid to the synthesis method, the process of crystal growth, structure and optical properties of GaN powder and its film. In this article, the preparation methods of GaN powder using the different kinds of raw materials have been reviewed.

Copyright

© 2016, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

Download article (PDF)

TY  - CONF
AU  - Wen-Zhi Yang
AU  - Wei Huang
AU  - Ya-Feng Li
AU  - Wei-Ming Huang
AU  - Fu-Jun Shang
AU  - Zi-Ming Chen
PY  - 2016/12
DA  - 2016/12
TI  - The Preparation Methods of Gallium Nitride Powder
BT  - Proceedings of the 4th 2016 International Conference on Material Science and Engineering (ICMSE 2016)
PB  - Atlantis Press
SP  - 535
EP  - 539
SN  - 2352-5401
UR  - https://doi.org/10.2991/icmse-16.2016.89
DO  - 10.2991/icmse-16.2016.89
ID  - Yang2016/12
ER  -