Texturization of Monocrystalline Silicon Wafers with K2CO3/K2SiO3 Solutions

DOI

10.2991/icmse-16.2016.88How to use a DOI?

Keywords

Monocrystalline silicon; Potassium carbonate; Size; Density.

Abstract

The texturization of monocrystalline silicon wafers using different K2CO3 concentrations under different times and temperatures solution has been investigated. In this paper, the pyramid density, size and uniformity on the wafer surface were discussed in different variables. We found that texturing time and temperature have crucial influences on the pyramid density; And the K2CO3 concentrations and texturing time have crucial influences on the pyramid size. With the increase in temperature (from 50øC to 90øC) resulted in the increase of the size varies from 2.32 to 1.78 m, and the density from 25% to 100 %.With the concentration increasing (from 15wt% to 30wt%), the size varies from 4.63 to 2.49 m, and the density from 95.5% to 86.5 %.With the time increasing (from 5min to 60min), the size varies from 2.18 to 2.92 m, and the density from 44.18% to 100 %. The monocrystalline silicon wafers with micro-structure pyramids can be used for surface-enhanced Raman scattering active substrate in the future research.

Copyright

© 2016, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Qiao-Yun Ye
AU  - Shi-Qing Man
AU  - Jin-Bao Chen
PY  - 2016/12
DA  - 2016/12
TI  - Texturization of Monocrystalline Silicon Wafers with K2CO3/K2SiO3 Solutions
BT  - Proceedings of the 4th 2016 International Conference on Material Science and Engineering (ICMSE 2016)
PB  - Atlantis Press
SP  - 528
EP  - 534
SN  - 2352-5401
UR  - https://doi.org/10.2991/icmse-16.2016.88
DO  - 10.2991/icmse-16.2016.88
ID  - Ye2016/12
ER  -