Study on the Design and Structure of mid-infrared InGaAsSb quantum well laser
- 10.2991/icmmita-16.2016.17How to use a DOI?
- mid-infrared; 2 m; quantum well laser.
2 m InGaAsSb/AlGaAsSb quantum well laser with AlGaAsSb as barrier layer and InGaAsSb as potential well layer. The composition and strain of the material have an important influence on the energy level position and band structure of the quantum well, which affects the performance of the laser. In this paper, we mainly study the materials and devices of semiconductor laser above 2 m.
- © 2017, the Authors. Published by Atlantis Press.
- Open Access
- This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).
Cite this article
TY - CONF AU - Minghui You AU - Qixiang Sun AU - Shijun Li AU - Liping Yin AU - Xue Li AU - Jingsheng Liu PY - 2017/01 DA - 2017/01 TI - Study on the Design and Structure of mid-infrared InGaAsSb quantum well laser BT - Proceedings of the 2016 4th International Conference on Machinery, Materials and Information Technology Applications PB - Atlantis Press SP - 86 EP - 89 SN - 2352-538X UR - https://doi.org/10.2991/icmmita-16.2016.17 DO - 10.2991/icmmita-16.2016.17 ID - You2017/01 ER -