Proceedings of the 2016 4th International Conference on Machinery, Materials and Information Technology Applications

Study on the Design and Structure of mid-infrared InGaAsSb quantum well laser

Authors
Minghui You, Qixiang Sun, Shijun Li, Liping Yin, Xue Li, Jingsheng Liu
Corresponding Author
Minghui You
Available Online January 2017.
DOI
https://doi.org/10.2991/icmmita-16.2016.17How to use a DOI?
Keywords
mid-infrared; 2 m; quantum well laser.
Abstract

2 m InGaAsSb/AlGaAsSb quantum well laser with AlGaAsSb as barrier layer and InGaAsSb as potential well layer. The composition and strain of the material have an important influence on the energy level position and band structure of the quantum well, which affects the performance of the laser. In this paper, we mainly study the materials and devices of semiconductor laser above 2 m.

Copyright
© 2017, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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Volume Title
Proceedings of the 2016 4th International Conference on Machinery, Materials and Information Technology Applications
Series
Advances in Computer Science Research
Publication Date
January 2017
ISBN
978-94-6252-285-5
ISSN
2352-538X
DOI
https://doi.org/10.2991/icmmita-16.2016.17How to use a DOI?
Copyright
© 2017, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

Cite this article

TY  - CONF
AU  - Minghui You
AU  - Qixiang Sun
AU  - Shijun Li
AU  - Liping Yin
AU  - Xue Li
AU  - Jingsheng Liu
PY  - 2017/01
DA  - 2017/01
TI  - Study on the Design and Structure of mid-infrared InGaAsSb quantum well laser
BT  - Proceedings of the 2016 4th International Conference on Machinery, Materials and Information Technology Applications
PB  - Atlantis Press
SP  - 86
EP  - 89
SN  - 2352-538X
UR  - https://doi.org/10.2991/icmmita-16.2016.17
DO  - https://doi.org/10.2991/icmmita-16.2016.17
ID  - You2017/01
ER  -