Study on HCl system wet-etching process of GaSb-based materials
Authors
Minghui You, Qixiang Sun, Shijun Li, Liping Yin, Xue Li, Jingsheng Liu
Corresponding Author
Minghui You
Available Online January 2017.
- DOI
- 10.2991/icmmita-16.2016.18How to use a DOI?
- Keywords
- GaSb-based material; HCl system; wet-etching.
- Abstract
In this paper, GaSb-based material in the near-infrared semiconductor laser has a broad application prospects. For the problems and etching solution suitable particularly critical of etching GaSb-based material. we studied on different etchant experimental analysis the HCl+HNO3(30+1)@T=5 ,37% HCl, HNO3+(0.08MHCl+CH3COOH) and HCl+H2O2+H2O(60+1+1), due to etching, the effects of different etching solutions on GaSb surface morphology, corrosion rate, etc., obtained HCl + H2O2 + H2O (60 + 1 + 1) treatment results was better, SEM showed the etched edge relatively tidy, relatively steep side, etched crystal to better selectivity, AFM surface roughness was 1.7nm.
- Copyright
- © 2017, the Authors. Published by Atlantis Press.
- Open Access
- This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).
Cite this article
TY - CONF AU - Minghui You AU - Qixiang Sun AU - Shijun Li AU - Liping Yin AU - Xue Li AU - Jingsheng Liu PY - 2017/01 DA - 2017/01 TI - Study on HCl system wet-etching process of GaSb-based materials BT - Proceedings of the 2016 4th International Conference on Machinery, Materials and Information Technology Applications PB - Atlantis Press SP - 90 EP - 93 SN - 2352-538X UR - https://doi.org/10.2991/icmmita-16.2016.18 DO - 10.2991/icmmita-16.2016.18 ID - You2017/01 ER -