Simulation of Tunnel Current in an Armchair Graphene Nanoribbon-Based p-n Diode for Undergraduate Physics Students

DOI

10.2991/icaet-14.2014.33How to use a DOI?

Keywords

Armchair graphene nanoribbon, tunnel current, tight binding, Airy-wave function, gaussian quadrature, diode

Abstract

Simulation of tunnel current flowing in a p-n diode made from armchair graphene nanoribbons (AGNRs) was built. The diode is composed of p-type and n-type AGNRs and bandgaps of the AGNRs are obtained by using a tight binding method. The bandgaps are required to describe a potential profile having a potential barrier of the diode. Transmittance of electrons tunneling through the potential barrier is then calculated by employing Airy wavefunctions. Gaussian quadrature method, which is a numerical approximation, is used to obtain tunnel current in the diode. All steps are visualized by using the graphical user interface of Matlab

Copyright

© 2014, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Rifky Syariati
AU  - Endi Suhendi
AU  - Fatimah A. Noor
AU  - Khairurrijal
PY  - 2015/01
DA  - 2015/01
TI  - Simulation of Tunnel Current in an Armchair Graphene Nanoribbon-Based p-n Diode for Undergraduate Physics Students
BT  - Proceedings of the 2014 International Conference on Advances in Education Technology
PB  - Atlantis Press
SP  - 136
EP  - 139
SN  - 2352-5398
UR  - https://doi.org/10.2991/icaet-14.2014.33
DO  - 10.2991/icaet-14.2014.33
ID  - Syariati2015/01
ER  -