Proceedings of the International Symposium "Engineering and Earth Sciences: Applied and Fundamental Research" dedicated to the 85th anniversary of H.I. Ibragimov (ISEES 2019)

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Impact of Defects Caused by Hot Charge Carriers on the Digital VLSI Parameters

Authors
G.A. Mustafayev, N.V. Cherkesova, A.I. Khasanov, A.G. Mustafayev
Corresponding Author
G.A. Mustafayev
Available Online August 2019.
DOI
10.2991/isees-19.2019.158How to use a DOI?
Keywords
degradation; transistor; hot carriers; reliability; instrument modeling; impact ionization.
Abstract

The problem of establishing a contact between degradation at the instrument and the circuit levels while designing very large scale integrated circuits (VLSI) is of a great interest. Instrument and circuits sensitivity to the effects conded by hot carriers is different, which is determined by a large number of factors. Hot carriers generated at the boundary cause a charge, which causes a change in the electric field and carrier mobility in the channel, with the result that the device degrades non-uniformly. Instrument degradation parameters were used in the SPICE instrument modeling program to assess degradation caused by hot carriers. For the initial and exposed n-channel MIS transistor, using the SUXES program, the parameters of the model that characterizes the deterioration was determined. The results of the study show that for VLSI, containing mainly inverter and valve circuits, the degradation of the switching period from one logical value to another in the transmitting valves will be a decisive effect in the general characteristic of the circuits' switching period.

Copyright
© 2019, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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Volume Title
Proceedings of the International Symposium "Engineering and Earth Sciences: Applied and Fundamental Research" dedicated to the 85th anniversary of H.I. Ibragimov (ISEES 2019)
Series
Atlantis Highlights in Material Sciences and Technology
Publication Date
August 2019
ISBN
10.2991/isees-19.2019.158
ISSN
2590-3217
DOI
10.2991/isees-19.2019.158How to use a DOI?
Copyright
© 2019, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

Cite this article

risenwbib
TY  - CONF
AU  - G.A. Mustafayev
AU  - N.V. Cherkesova
AU  - A.I. Khasanov
AU  - A.G. Mustafayev
PY  - 2019/08
DA  - 2019/08
TI  - Impact of Defects Caused by Hot Charge Carriers on the Digital VLSI Parameters
BT  - Proceedings of the International Symposium "Engineering and Earth Sciences: Applied and Fundamental Research" dedicated to the 85th anniversary of H.I. Ibragimov (ISEES 2019)
PB  - Atlantis Press
SP  - 34
EP  - 37
SN  - 2590-3217
UR  - https://doi.org/10.2991/isees-19.2019.158
DO  - 10.2991/isees-19.2019.158
ID  - Mustafayev2019/08
ER  -