The Electronic Structures and Optical Properties in Nitrogen-Doped SnO2
Authors
Dan-Xu Xing, Pei-Ji Wang, Chang-Wen Zhang
Corresponding Author
Dan-Xu Xing
Available Online December 2016.
- DOI
- 10.2991/icmse-16.2016.92How to use a DOI?
- Keywords
- Electronic structure; First-principles calculation
- Abstract
We perform first-principles calculations to study the electronic structures and optical properties of rutile SnNxO2-x as a possible photocatalytic material. It is found that N incorporation lead to the enhancement of p states in the energy gap and the decrease of band gap. The optical transition between N p and O p enhances and shifts to high energy range with increasing N concentrations. The calculations for the optical properties also predict a possible optimum N-doping level in SnO2 with a high visible photoresponse and as a photocatalytic material.
- Copyright
- © 2016, the Authors. Published by Atlantis Press.
- Open Access
- This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).
Cite this article
TY - CONF AU - Dan-Xu Xing AU - Pei-Ji Wang AU - Chang-Wen Zhang PY - 2016/12 DA - 2016/12 TI - The Electronic Structures and Optical Properties in Nitrogen-Doped SnO2 BT - Proceedings of the 4th 2016 International Conference on Material Science and Engineering (ICMSE 2016) PB - Atlantis Press SP - 554 EP - 559 SN - 2352-5401 UR - https://doi.org/10.2991/icmse-16.2016.92 DO - 10.2991/icmse-16.2016.92 ID - Xing2016/12 ER -