Proceedings of the 4th 2016 International Conference on Material Science and Engineering (ICMSE 2016)

An Off-Axis Electron Holography Study of the Built-In Electric Field in LaAlO3/SrTiO3 Heterointerface

Authors
Lin Xie
Corresponding Author
Lin Xie
Available Online December 2016.
DOI
10.2991/icmse-16.2016.79How to use a DOI?
Keywords
Electron holography, LaAlO3/SrTiO3 heterojunction, Two-dimensional electron gas, Built-in electric field.
Abstract

The built-in electric field across LaAlO3/SrTiO3 heterointerface, which hosts two-dimensional electron gas (2DEG), is studied by off-axis electron holography in transmission electron microscopy (TEM). On the contrary to the well-accepted polar catastrophe model, which indicates a Zener breakdown due to the strong built-in electric field in LaAlO3 (~0.24 V/), we find that such an internal electric field in LaAlO3 is almost negligible (<0.1 V/) when compared to the band bending of SrTiO3. Our results suggest that the emergence of 2DEG should have other explanations beyond the polar catastrophe model.

Copyright
© 2016, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

Download article (PDF)

Volume Title
Proceedings of the 4th 2016 International Conference on Material Science and Engineering (ICMSE 2016)
Series
Advances in Engineering Research
Publication Date
December 2016
ISBN
10.2991/icmse-16.2016.79
ISSN
2352-5401
DOI
10.2991/icmse-16.2016.79How to use a DOI?
Copyright
© 2016, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

Cite this article

TY  - CONF
AU  - Lin Xie
PY  - 2016/12
DA  - 2016/12
TI  - An Off-Axis Electron Holography Study of the Built-In Electric Field in LaAlO3/SrTiO3 Heterointerface
BT  - Proceedings of the 4th 2016 International Conference on Material Science and Engineering (ICMSE 2016)
PB  - Atlantis Press
SP  - 475
EP  - 479
SN  - 2352-5401
UR  - https://doi.org/10.2991/icmse-16.2016.79
DO  - 10.2991/icmse-16.2016.79
ID  - Xie2016/12
ER  -