1.25 GHz Single-photon Detection with Sinusoidally Gated InGaAs/InP Avalanche Photodiode
Yuanjin Chen, Zinan Huang, Guomin Bai, Heping Zeng, Yan Liang
Available Online January 2017.
- 10.2991/icmmita-16.2016.313How to use a DOI?
- single-photon detection; sine-wave gating; dark count rate; afterpulse
The InGaAs/InP avalanche photodiodes (APDs) are one of the most practical devices for single-photon detection at the near-infrared wavelengths. In this paper, we report a Chinese-made InGaAs/InP APD based single-photon detector operated at 1.25 GHz. The combining technique of sine-wave gating and low-pass filtering was employed to suppress the spike noise. Detection efficiency of 20% was attained with the dark count rate of 2.34ž10-6 per gate and the afterpulse probability of 2.1% at -25øC. These performance parameters were measured to be approximately the same as the imported APD, showing that the manufacturing technology and performance of the InGaAs/InP APD had a great progress in China.
- © 2017, the Authors. Published by Atlantis Press.
- Open Access
- This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).
Cite this article
TY - CONF AU - Yuanjin Chen AU - Zinan Huang AU - Guomin Bai AU - Heping Zeng AU - Yan Liang PY - 2017/01 DA - 2017/01 TI - 1.25 GHz Single-photon Detection with Sinusoidally Gated InGaAs/InP Avalanche Photodiode BT - Proceedings of the 2016 4th International Conference on Machinery, Materials and Information Technology Applications PB - Atlantis Press SP - 1399 EP - 1402 SN - 2352-538X UR - https://doi.org/10.2991/icmmita-16.2016.313 DO - 10.2991/icmmita-16.2016.313 ID - Chen2017/01 ER -