1.25 GHz Single-photon Detection with Sinusoidally Gated InGaAs/InP Avalanche Photodiode

DOI

10.2991/icmmita-16.2016.313How to use a DOI?

Keywords

single-photon detection; sine-wave gating; dark count rate; afterpulse

Abstract

The InGaAs/InP avalanche photodiodes (APDs) are one of the most practical devices for single-photon detection at the near-infrared wavelengths. In this paper, we report a Chinese-made InGaAs/InP APD based single-photon detector operated at 1.25 GHz. The combining technique of sine-wave gating and low-pass filtering was employed to suppress the spike noise. Detection efficiency of 20% was attained with the dark count rate of 2.34ž10-6 per gate and the afterpulse probability of 2.1% at -25øC. These performance parameters were measured to be approximately the same as the imported APD, showing that the manufacturing technology and performance of the InGaAs/InP APD had a great progress in China.

Copyright

© 2017, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Yuanjin Chen
AU  - Zinan Huang
AU  - Guomin Bai
AU  - Heping Zeng
AU  - Yan Liang
PY  - 2017/01
DA  - 2017/01
TI  - 1.25 GHz Single-photon Detection with Sinusoidally Gated InGaAs/InP Avalanche Photodiode
BT  - Proceedings of the 2016 4th International Conference on Machinery, Materials and Information Technology Applications
PB  - Atlantis Press
SP  - 1399
EP  - 1402
SN  - 2352-538X
UR  - https://doi.org/10.2991/icmmita-16.2016.313
DO  - 10.2991/icmmita-16.2016.313
ID  - Chen2017/01
ER  -