Proceedings of the 4th International Conference on Mechatronics, Materials, Chemistry and Computer Engineering 2015

Failure Analysis of Au-Al Wire Bonding to MOSFETs

Authors
Jiaoying Huang, Can Cui, Cheng Gao, Yuanyuan Xiong
Corresponding Author
Jiaoying Huang
Available Online December 2015.
DOI
https://doi.org/10.2991/icmmcce-15.2015.495How to use a DOI?
Keywords
Failure analysis, MOSFET, Au-Al wire bonding, reliability, bonding strength.
Abstract
The gold and aluminum (Au-Al) wire bonding is used to realize interconnection for semiconductor devices. But, sometimes, the failure of Au-Al bond wire exists. In this paper, the failure influence factors of Au-Al bonding to Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) were discussed. Then the wire bond failure analysis of MOSFETs were researched. And bond strength analysis, microscopic examination, scanning electron microscopy (SEM) examination and energy dispersive spectrometer (EDS) analysis, which belongs to the details of all the tests, were completed combined with an application example of MOSFETs. The results demonstrated that the high temperature and the stain in the device lead to the failure of MOSFETs. The temperature is too high to make voids named Kirkendall holes on the interface of Au-Al bonding. And the pollution influenced the materials to cause the bond wire off the substrate. It was suggested that the key parameter, that it to say, the temperature and the pollution like carbon oxygen compound should be strictly controlled to improve the reliability of MOSFETs, especially in the high temperature storage and working conditions.
Open Access
This is an open access article distributed under the CC BY-NC license.

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Cite this article

TY  - CONF
AU  - Jiaoying Huang
AU  - Can Cui
AU  - Cheng Gao
AU  - Yuanyuan Xiong
PY  - 2015/12
DA  - 2015/12
TI  - Failure Analysis of Au-Al Wire Bonding to MOSFETs
BT  - Proceedings of the 4th International Conference on Mechatronics, Materials, Chemistry and Computer Engineering 2015
PB  - Atlantis Press
SN  - 2352-538X
UR  - https://doi.org/10.2991/icmmcce-15.2015.495
DO  - https://doi.org/10.2991/icmmcce-15.2015.495
ID  - Huang2015/12
ER  -