Failure Analysis of Au-Al Wire Bonding to MOSFETs
Jiaoying Huang, Can Cui, Cheng Gao, Yuanyuan Xiong
Available Online December 2015.
- https://doi.org/10.2991/icmmcce-15.2015.495How to use a DOI?
- Failure analysis, MOSFET, Au-Al wire bonding, reliability, bonding strength.
- The gold and aluminum (Au-Al) wire bonding is used to realize interconnection for semiconductor devices. But, sometimes, the failure of Au-Al bond wire exists. In this paper, the failure influence factors of Au-Al bonding to Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) were discussed. Then the wire bond failure analysis of MOSFETs were researched. And bond strength analysis, microscopic examination, scanning electron microscopy (SEM) examination and energy dispersive spectrometer (EDS) analysis, which belongs to the details of all the tests, were completed combined with an application example of MOSFETs. The results demonstrated that the high temperature and the stain in the device lead to the failure of MOSFETs. The temperature is too high to make voids named Kirkendall holes on the interface of Au-Al bonding. And the pollution influenced the materials to cause the bond wire off the substrate. It was suggested that the key parameter, that it to say, the temperature and the pollution like carbon oxygen compound should be strictly controlled to improve the reliability of MOSFETs, especially in the high temperature storage and working conditions.
- Open Access
- This is an open access article distributed under the CC BY-NC license.
Cite this article
TY - CONF AU - Jiaoying Huang AU - Can Cui AU - Cheng Gao AU - Yuanyuan Xiong PY - 2015/12 DA - 2015/12 TI - Failure Analysis of Au-Al Wire Bonding to MOSFETs BT - Proceedings of the 4th International Conference on Mechatronics, Materials, Chemistry and Computer Engineering 2015 PB - Atlantis Press SN - 2352-538X UR - https://doi.org/10.2991/icmmcce-15.2015.495 DO - https://doi.org/10.2991/icmmcce-15.2015.495 ID - Huang2015/12 ER -