Proceedings of the 4th International Conference on Mechatronics, Materials, Chemistry and Computer Engineering 2015

Study of Failure Analysis of Power Transistors

Authors
Jiaoying Huang, Sicong Hu, Cheng Gao, Xiangfen Wang
Corresponding Author
Jiaoying Huang
Available Online December 2015.
DOI
https://doi.org/10.2991/icmmcce-15.2015.494How to use a DOI?
Keywords
Failure analysis, power transistor, failure process.
Abstract
This paper present a process of failure analysis which, to some extent, can demonstrate a variety of failure process in regard to power transistors. General failure analysis process will be introduced at the beginning of this article. The test objects are power transistors which were found to be the fundamental cause towards failure of control system. Specifics of test procedure will be disclosed as below in the text. The procedure of failure analysis was conducted through comparison. Through integrating examination, inspection result and deduction, outcome illustrates that the interaction of congenital defects and ambient activation in use contribute to failure. Ultimately, given the inferences that inherent defects existed before employment, and that adverse ambience aggravate the damage of components, we will propose conclusion and opinions on production. The possibility that failure analysis makes power transistors more reliability will sustain our endeavor.
Open Access
This is an open access article distributed under the CC BY-NC license.

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Cite this article

TY  - CONF
AU  - Jiaoying Huang
AU  - Sicong Hu
AU  - Cheng Gao
AU  - Xiangfen Wang
PY  - 2015/12
DA  - 2015/12
TI  - Study of Failure Analysis of Power Transistors
BT  - Proceedings of the 4th International Conference on Mechatronics, Materials, Chemistry and Computer Engineering 2015
PB  - Atlantis Press
SN  - 2352-538X
UR  - https://doi.org/10.2991/icmmcce-15.2015.494
DO  - https://doi.org/10.2991/icmmcce-15.2015.494
ID  - Huang2015/12
ER  -