Design of novel full adder based on resonant tunneling diode

DOI

10.2991/icecee-15.2015.144How to use a DOI?

Keywords

resonant tunneling diode (RTD); full adder; low-power

Abstract

The resonant tunneling diode (RTD) has attracted much attention because of its unique negative differential resistance (NDR) characteristic, RTD increases the powerful logic function of a single gate and is more suitable to implement the threshold gates. Recently, the generalized threshold gate (GTG) and the multi-threshold threshold gate (MTTG) have been proposed, which provide the more based circuit structures of RTDs. Meanwhile, the RTD full adder circuits with GTG and MTTG circuit structures have been proposed. In this paper, a novel full adder circuit based on RTD is proposed, compare to previous designs, the novel proposed circuit has better performance, which uses fewer devices and reduces 3.6%–11.5% power.

Copyright

© 2015, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Maoqun Yao
AU  - Kai Yang
AU  - Zhongyun Jia
PY  - 2015/06
DA  - 2015/06
TI  - Design of novel full adder based on resonant tunneling diode
BT  - Proceedings of the 2015 International Conference on Electrical, Computer Engineering and Electronics
PB  - Atlantis Press
SP  - 735
EP  - 740
SN  - 2352-538X
UR  - https://doi.org/10.2991/icecee-15.2015.144
DO  - 10.2991/icecee-15.2015.144
ID  - Yao2015/06
ER  -