Defect Characteristics of Be-doped GaSb Film Grown on GaAs

DOI

10.2991/eame-18.2018.24How to use a DOI?

Keywords

GaSb; positron annihilation spectroscop; XRD; defect

Abstract

The defect characteristics of the Be-doped GaSb and no-doped GaSb film grown on GaAs and GaSb substrate respectively were analysed by the method of molecular beam epitaxy (MBE), positron annihilation Doppler broadening spectroscopy (PADBS), X-ray diffraction spectra (XRD) and atomic force microscopy (AFM). The experimental results show that the defects in Be-doped semiconductor GaSb could be attributed to existence of intrinsic defect, which has no complex defects in it. After doped Be atom, the crystallization of GaSb become worse, and the Be existed mainly in the interstitial atom.

Copyright

© 2018, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Xin Guo
AU  - Yan Chen
PY  - 2018/06
DA  - 2018/06
TI  - Defect Characteristics of Be-doped GaSb Film Grown on GaAs
BT  - Proceedings of the 2018 3rd International Conference on Electrical, Automation and Mechanical Engineering (EAME 2018)
PB  - Atlantis Press
SP  - 121
EP  - 123
SN  - 2352-5401
UR  - https://doi.org/10.2991/eame-18.2018.24
DO  - 10.2991/eame-18.2018.24
ID  - Guo2018/06
ER  -