High-k Gate Stacks Influence on Characteristics of Nano-scale MOSFET Structures

DOI

10.2991/mic-15.2015.39How to use a DOI?

Keywords

component: MOSFET; high-k materials; TCAD; physical models.

Abstract

The models of electro-physical effects built-into Sentaurus TCAD have been tested. The models providing an adequate modeling of deep submicron high-k MOSFETs have been selected. The gate and drain leakage currents for 45 nm MOSFET with PolySi gate and SiO2, SiO2/HfO2 and HfO2 gate dielectrics have been calculated using TCAD. It has been shown that the replacement of traditional SiO2 by an equivalent HfO2 dielectric considerably reduces the gate leakage current by several orders due to elimination of the tunneling effect influence. Besides, the threshold voltage, saturation drain current, mobility, transconductance, etc. degrade within 10-20% range.

Copyright

© 2015, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Konstantin O. Petrosyants
AU  - Dmitriy A. Popov
PY  - 2015/08
DA  - 2015/08
TI  - High-k Gate Stacks Influence on Characteristics of Nano-scale MOSFET Structures
BT  - Proceedings of the 2nd International Conference on Modelling, Identification and Control
PB  - Atlantis Press
SP  - 174
EP  - 176
SN  - 1951-6851
UR  - https://doi.org/10.2991/mic-15.2015.39
DO  - 10.2991/mic-15.2015.39
ID  - Petrosyants2015/08
ER  -