Research on InGaN/GaN solar cells using Thoma Swan CCS-MOCVD system
- DOI
- 10.2991/lemcs-14.2014.263How to use a DOI?
- Keywords
- Solar cell; MQW; gap position; MOCVD; PL
- Abstract
Two InGaN/GaN MQWs samples were grown with two different showerhead gap position 13 and 25 mm, using Thoma Swan CCS-MOCVD system, in order to study the effect of showerhead gap position on the growth of InGaN/GaN MQWs. Through the measurement results, we find that the surface morphology, interface quality, thickness of QB and QW, In composition and PL spectrum of samples are all change significantly. This can attributes to the change of temperature field, flow field and concentration field in the reactor due to the different showerhead gap position. Moreover, the showerhead gap position also affect the pre-reaction in the reactor, which result in converting the thickness of QB, QW and In composition. Consequently, it make the PL spectrum different.
- Copyright
- © 2014, the Authors. Published by Atlantis Press.
- Open Access
- This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).
Cite this article
TY - CONF AU - Tongwei Yu AU - Yuqiu Sui AU - Xu Huang AU - Chenggang Wang PY - 2014/05 DA - 2014/05 TI - Research on InGaN/GaN solar cells using Thoma Swan CCS-MOCVD system BT - Proceedings of the International Conference on Logistics, Engineering, Management and Computer Science PB - Atlantis Press SP - 1173 EP - 1176 SN - 1951-6851 UR - https://doi.org/10.2991/lemcs-14.2014.263 DO - 10.2991/lemcs-14.2014.263 ID - Yu2014/05 ER -