Proceedings of the International Conference on Logistics, Engineering, Management and Computer Science

Dependence on working pressure of amorphous GaAs prepared by RF magnetron sputtering

Authors
Yanping Yao, Baoxue Bo
Corresponding Author
Yanping Yao
Available Online May 2014.
DOI
https://doi.org/10.2991/lemcs-14.2014.197How to use a DOI?
Keywords
Amorphous;GaAs;properties;working pressure;structure
Abstract
We prepared amorphous GaAs (a-GaAs) films by an RF magnetron sputtering method and investigated the influence of working pressure on the structure, composition, optical and electrical properties. The experimental data suggest the films prepared above 0.5 Pa are amorphous and the Ga to As concentration ratio decreases when increasing working pressure .The optical gap, resistivity and photosensitive increase with increasing working pressure. These findings suggest that working gas pressure is very important to control structure, chemical composition, optical and electrical properties of a-GaAs films prepared by magnetron sputtering method. These results were analyzed in terms of the effect of gas pressure on defect and band-tail state densities in a-GaAs films.
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Proceedings
International Conference on Logistics Engineering, Management and Computer Science (LEMCS 2014)
Part of series
Advances in Intelligent Systems Research
Publication Date
May 2014
ISBN
978-94-6252-010-3
ISSN
1951-6851
DOI
https://doi.org/10.2991/lemcs-14.2014.197How to use a DOI?
Open Access
This is an open access article distributed under the CC BY-NC license.

Cite this article

TY  - CONF
AU  - Yanping Yao
AU  - Baoxue Bo
PY  - 2014/05
DA  - 2014/05
TI  - Dependence on working pressure of amorphous GaAs prepared by RF magnetron sputtering
BT  - International Conference on Logistics Engineering, Management and Computer Science (LEMCS 2014)
PB  - Atlantis Press
SP  - 867
EP  - 870
SN  - 1951-6851
UR  - https://doi.org/10.2991/lemcs-14.2014.197
DO  - https://doi.org/10.2991/lemcs-14.2014.197
ID  - Yao2014/05
ER  -