Dependence on working pressure of amorphous GaAs prepared by RF magnetron sputtering
Yanping Yao, Baoxue Bo
Available Online May 2014.
- https://doi.org/10.2991/lemcs-14.2014.197How to use a DOI?
- Amorphous;GaAs;properties;working pressure;structure
- We prepared amorphous GaAs (a-GaAs) films by an RF magnetron sputtering method and investigated the influence of working pressure on the structure, composition, optical and electrical properties. The experimental data suggest the films prepared above 0.5 Pa are amorphous and the Ga to As concentration ratio decreases when increasing working pressure .The optical gap, resistivity and photosensitive increase with increasing working pressure. These findings suggest that working gas pressure is very important to control structure, chemical composition, optical and electrical properties of a-GaAs films prepared by magnetron sputtering method. These results were analyzed in terms of the effect of gas pressure on defect and band-tail state densities in a-GaAs films.
- Open Access
- This is an open access article distributed under the CC BY-NC license.
Cite this article
TY - CONF AU - Yanping Yao AU - Baoxue Bo PY - 2014/05 DA - 2014/05 TI - Dependence on working pressure of amorphous GaAs prepared by RF magnetron sputtering BT - International Conference on Logistics Engineering, Management and Computer Science (LEMCS 2014) PB - Atlantis Press SP - 867 EP - 870 SN - 1951-6851 UR - https://doi.org/10.2991/lemcs-14.2014.197 DO - https://doi.org/10.2991/lemcs-14.2014.197 ID - Yao2014/05 ER -