Analysis of Threshold Current for InP/ AlGaInAs Multiple Quantum Well Ring Laser

DOI

10.2991/lemcs-14.2014.18How to use a DOI?

Keywords

semiconductor ring laser; threshold current; multiple quantum well; indium phosphide

Abstract

Due to the flexible functions and monolithic integration, semiconductor ring laser (SRL) has become a hot topic in the field of photonic and optoelectronic integration. In this paper, a new threshold current expression suitable for the circular SRL with multiple quantum well (MQW) material structure was derived from the oscillation condition of conventional Fabry-Perot cavity. The influences of ring radius, etching depth and waveguide separation on the threshold current were analyzed and numerically calculated. The calculation results indicated that the total loss of the circular SRL is mainly determined by the ring radius for small-size device. Compared with the shallow-etched devices, the deep-etched SRLs can lase even with smaller radius, and a minimum threshold current of 35mA was obtained for InP/ AlGaInAs MQW circular laser.

Copyright

© 2014, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Sheng Xie
AU  - Hao Wang
AU  - Jing Guo
AU  - Weilian Guo
PY  - 2014/05
DA  - 2014/05
TI  - Analysis of Threshold Current for InP/ AlGaInAs Multiple Quantum Well Ring Laser
BT  - Proceedings of the International Conference on Logistics, Engineering, Management and Computer Science
PB  - Atlantis Press
SP  - 77
EP  - 80
SN  - 1951-6851
UR  - https://doi.org/10.2991/lemcs-14.2014.18
DO  - 10.2991/lemcs-14.2014.18
ID  - Xie2014/05
ER  -