Effects of Structure Parameters on Temperature Characteristics of Multiple Quantum Well Ring Laser
Jing Guo, Sheng Xie, Hao Wang, Weilian Guo
Available Online May 2014.
- https://doi.org/10.2991/lemcs-14.2014.8How to use a DOI?
- temperature characteristics; semiconductor ring laser; multiple quantum well; gallium arsenid
- Due to the potential application in all-optical signal processing, semiconductor ring laser (SRL) has become one of research hotspots in the present. In this paper, an equivalent SRL was modeled utilizing a numerical device simulator (ATLAS), and the effects of structure parameter on the temperature characteristics of multiple quantum well SRL were simulated and analyzed with temperature range from 260K to 460K. The simulation results indicated that an optimal quantum well structure with well width around 20nm and well number of five existed for the lowest threshold current density. And the ring radius has little effect on the temperature characteristics of differential quantum efficiency and lasing wavelength.
- Open Access
- This is an open access article distributed under the CC BY-NC license.
Cite this article
TY - CONF AU - Jing Guo AU - Sheng Xie AU - Hao Wang AU - Weilian Guo PY - 2014/05 DA - 2014/05 TI - Effects of Structure Parameters on Temperature Characteristics of Multiple Quantum Well Ring Laser BT - International Conference on Logistics Engineering, Management and Computer Science (LEMCS 2014) PB - Atlantis Press SN - 1951-6851 UR - https://doi.org/10.2991/lemcs-14.2014.8 DO - https://doi.org/10.2991/lemcs-14.2014.8 ID - Guo2014/05 ER -