Effects of substrate temperature on graphene grown on Ni foil via atmospheric pressure chemical vapor deposition

DOI

10.2991/iwmecs-15.2015.61How to use a DOI?

Keywords

Graphene;APCVD;X-ray diffraction;growth mechanism.

Abstract

Multilayer graphene was grown on Ni foil(30µm) via atmospheric pressure chemical vapor deposition (APCVD) at different temperature of 800 ,900 ,1000 , we observe structural difference between the three process by in situ X-ray diffraction and Raman measurements, our experimental results show that temperature plays an important role on graphene growth, the growth rate is increased with the increasing temperature. Moreover, we found that at growth temperature of 900 , graphene has the best quality. These results will be helpful to better understanding the growth mechanism in the graphene growth process.

Copyright

© 2015, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Qunfei Zou
AU  - Guangzhi Yin
AU  - Yueliang Gu
AU  - Deming Xie
PY  - 2015/10
DA  - 2015/10
TI  - Effects of substrate temperature on graphene grown on Ni foil via atmospheric pressure chemical vapor deposition
BT  - Proceedings of the 2015 2nd International Workshop on Materials Engineering and Computer Sciences
PB  - Atlantis Press
SP  - 313
EP  - 316
SN  - 2352-538X
UR  - https://doi.org/10.2991/iwmecs-15.2015.61
DO  - 10.2991/iwmecs-15.2015.61
ID  - Zou2015/10
ER  -