AlNGaN HEMT T- gate Optimal Design

DOI

10.2991/isccca.2013.213How to use a DOI?

Keywords

frequency characteristics, GaN HEMT , T-gate size, Simulation model

Abstract

The GaN HEMT is widely used in high-frequency aspects, use the T-gate to reduce gate resistance is one of the most effective methods to improve the the device maximum oscillation frequency (fmax). But fmax is very sensitive to T-gate size, improper selection may reduce fmax, Therefore, in order to reduce the cost of production, it is necessary to select appropriate simulation T-gate size. We have worked out AlGaN/GaN HEMT with gate length of 0.17 m and fmax values 110GHz. Accuracy of the simulation model is verified by experiment. Then detailed simulates the impact of the T-gate size and we obtain ptimized T-gate size range.

Copyright

© 2013, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Xiaowei Zhang
AU  - Kejin Jia
AU  - Yuangang Wang
AU  - Zhihong Feng
AU  - Zhengping Zhao
PY  - 2013/02
DA  - 2013/02
TI  - AlNGaN HEMT T- gate Optimal Design
BT  - Proceedings of the 2nd International Symposium on Computer, Communication, Control and Automation (ISCCCA 2013)
PB  - Atlantis Press
SP  - 845
EP  - 847
SN  - 1951-6851
UR  - https://doi.org/10.2991/isccca.2013.213
DO  - 10.2991/isccca.2013.213
ID  - Zhang2013/02
ER  -