Proceedings of the 2015 2nd International Forum on Electrical Engineering and Automation (IFEEA 2015)

Fabrication and Evaluation of a 2000V-4A SiC Module

Authors
Xing Hu, Ao Liu, Gang Chen
Corresponding Author
Xing Hu
Available Online January 2016.
DOI
https://doi.org/10.2991/ifeea-15.2016.13How to use a DOI?
Keywords
4H-SiC; high temperature; reverse recovery; surge current
Abstract
A new 2000V-4A Junction Barrier controlled Schottky (JBS) diodes module has been fabricated using 4H-SiC. The module is composed of two SiC JBS diodes, and it is used for rectifying circuits. By adopting the proper SBD metal ,optimized structures and fabrication process, we succeeded in achieving good balance between blocking voltage and on-resistance, especially at high temperature to 175°C. Furthermore, the fabricated module have a fast recovery time of 26ns, and diodes of the module can withstand the surge current of 20A.
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Proceedings
2015 2nd International Forum on Electrical Engineering and Automation (IFEEA 2015)
Part of series
Advances in Engineering Research
Publication Date
January 2016
ISBN
978-94-6252-153-7
ISSN
2352-5401
DOI
https://doi.org/10.2991/ifeea-15.2016.13How to use a DOI?
Open Access
This is an open access article distributed under the CC BY-NC license.

Cite this article

TY  - CONF
AU  - Xing Hu
AU  - Ao Liu
AU  - Gang Chen
PY  - 2016/01
DA  - 2016/01
TI  - Fabrication and Evaluation of a 2000V-4A SiC Module
BT  - 2015 2nd International Forum on Electrical Engineering and Automation (IFEEA 2015)
PB  - Atlantis Press
SN  - 2352-5401
UR  - https://doi.org/10.2991/ifeea-15.2016.13
DO  - https://doi.org/10.2991/ifeea-15.2016.13
ID  - Hu2016/01
ER  -