Fabrication and Evaluation of a 2000V-4A SiC Module
Authors
Xing Hu, Ao Liu, Gang Chen
Corresponding Author
Xing Hu
Available Online January 2016.
- DOI
- 10.2991/ifeea-15.2016.13How to use a DOI?
- Keywords
- 4H-SiC; high temperature; reverse recovery; surge current
- Abstract
A new 2000V-4A Junction Barrier controlled Schottky (JBS) diodes module has been fabricated using 4H-SiC. The module is composed of two SiC JBS diodes, and it is used for rectifying circuits. By adopting the proper SBD metal ,optimized structures and fabrication process, we succeeded in achieving good balance between blocking voltage and on-resistance, especially at high temperature to 175°C. Furthermore, the fabricated module have a fast recovery time of 26ns, and diodes of the module can withstand the surge current of 20A.
- Copyright
- © 2016, the Authors. Published by Atlantis Press.
- Open Access
- This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).
Cite this article
TY - CONF AU - Xing Hu AU - Ao Liu AU - Gang Chen PY - 2016/01 DA - 2016/01 TI - Fabrication and Evaluation of a 2000V-4A SiC Module BT - Proceedings of the 2015 2nd International Forum on Electrical Engineering and Automation (IFEEA 2015) PB - Atlantis Press SP - 62 EP - 65 SN - 2352-5401 UR - https://doi.org/10.2991/ifeea-15.2016.13 DO - 10.2991/ifeea-15.2016.13 ID - Hu2016/01 ER -