Proceedings of the 2015 2nd International Forum on Electrical Engineering and Automation (IFEEA 2015)

Fabrication and Characterization of 1200V 40A 4H-SiC SBD

Authors
Gang Chen, Yinglu Fang, Yun Li, Lin Wang, Song Bai, Ao Liu, Runhua Huang, Yonghong Tao, Zhifei Zhao
Corresponding Author
Gang Chen
Available Online January 2016.
DOI
https://doi.org/10.2991/ifeea-15.2016.12How to use a DOI?
Keywords
4H-SiC, SBD, ohmic
Abstract
High voltage 4H-SiC Ti schottky junction barrier schottky (JBS) diode with breakdown voltage of 1200 V and forward current of 40 A has been fabricated. A low reverse leakage current below 1.02 × 10-4 A or 4.08 × 10-4 A/cm2 at the 25 and the reverse bias voltage of 1200 V has been obtained. The forward on-state current was 40 A at VF = 1.61 V with 25 and at VF = 1.89 V with 100 . The chip is 5 mm × 5 mm and the active-region is 3.8 mm × 3.8 mm. The turn-on voltage is about 0.83 V. The on-state resistance is 4 m •cm2. The doping and thickness of the N-type drift layer and the device structure have been performed by numerical simulations. The SiC JBS devices have been fabricated and the processes were in detail. By using Ti/Ni/Au multilayer metal structure, the double side Au process of 4H-SiC JBS diode is formed.
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Proceedings
2015 2nd International Forum on Electrical Engineering and Automation (IFEEA 2015)
Part of series
Advances in Engineering Research
Publication Date
January 2016
ISBN
978-94-6252-153-7
ISSN
2352-5401
DOI
https://doi.org/10.2991/ifeea-15.2016.12How to use a DOI?
Open Access
This is an open access article distributed under the CC BY-NC license.

Cite this article

TY  - CONF
AU  - Gang Chen
AU  - Yinglu Fang
AU  - Yun Li
AU  - Lin Wang
AU  - Song Bai
AU  - Ao Liu
AU  - Runhua Huang
AU  - Yonghong Tao
AU  - Zhifei Zhao
PY  - 2016/01
DA  - 2016/01
TI  - Fabrication and Characterization of 1200V 40A 4H-SiC SBD
BT  - 2015 2nd International Forum on Electrical Engineering and Automation (IFEEA 2015)
PB  - Atlantis Press
SN  - 2352-5401
UR  - https://doi.org/10.2991/ifeea-15.2016.12
DO  - https://doi.org/10.2991/ifeea-15.2016.12
ID  - Chen2016/01
ER  -