Proceedings of the 2015 International Conference on Material Science and Applications

Low-Resistivity Indium-Tin-Oxide Transparent Conducting Films: Dependence of Carrier Electron Concentration on Tin Concentration

Authors
Yutaka Sawada, Shigeyuki Seki, Takayuki Uchida, Yoichi Hoshi, Mei-Han Wang, Hao Lei, Li-Xian Sun
Corresponding Author
Yutaka Sawada
Available Online June 2014.
DOI
10.2991/icmsa-15.2015.131How to use a DOI?
Keywords
ITO, Tin-doped In2O3, Spray chemical vapor deposition.
Abstract

Indium-Tin-Oxide (ITO, tin-doped In2O3) films with low resistivity (7.7×10-5 ohm cm) and high carrier electron concentration (1.8×1021 cm-3) was successfully prepared by spray chemical vapor deposision in air and post-deposition annealing in reducing atmosphere in our previous papers; Y. Sawada et al., Thin Solid Films, 409 (2002) 46-50 and Y. Sawada, Materials Sci. Forum, 437-438 (2003) 23-26. Doping one tin ion generated two carrier electrons at low concentration of tin. The relation between carrier electron concentration and tin concentration are discussed in the present paper to propose a nobel defect model.

Copyright
© 2015, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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Volume Title
Proceedings of the 2015 International Conference on Material Science and Applications
Series
Advances in Physics Research
Publication Date
June 2014
ISBN
978-94-62520-75-2
ISSN
2352-541X
DOI
10.2991/icmsa-15.2015.131How to use a DOI?
Copyright
© 2015, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

Cite this article

TY  - CONF
AU  - Yutaka Sawada
AU  - Shigeyuki Seki
AU  - Takayuki Uchida
AU  - Yoichi Hoshi
AU  - Mei-Han Wang
AU  - Hao Lei
AU  - Li-Xian Sun
PY  - 2014/06
DA  - 2014/06
TI  - Low-Resistivity Indium-Tin-Oxide Transparent Conducting Films: Dependence of Carrier Electron Concentration on Tin Concentration
BT  - Proceedings of the 2015 International Conference on Material Science and Applications
PB  - Atlantis Press
SP  - 719
EP  - 722
SN  - 2352-541X
UR  - https://doi.org/10.2991/icmsa-15.2015.131
DO  - 10.2991/icmsa-15.2015.131
ID  - Sawada2014/06
ER  -