Crystallization Kinetics in Ge-Sb-Te-Bi and Ge-Sb-Te-In Thin Films
Authors
Sherchenkov Alexey, Lazarenko Petr, Timoshenkov Sergey, Kozyukhin Sergey
Corresponding Author
Sherchenkov Alexey
Available Online March 2016.
- DOI
- 10.2991/icmmse-16.2016.62How to use a DOI?
- Keywords
- Crystallization, Phase change memory, Ge-Sb-Te
- Abstract
In this work mechanism and kinetics of crystallization for thin films on the basis of Ge-Sb-Te-Bi and Ge-Sb-Te-In perspective for phase change memory application were investigated. Possible data processing and storage times of the PCM cell were estimated. It was shown that PCM cell based on Ge2Sb2Te5+0.5 wt. % Bi have minimum data processing and maximum data storage times in comparison with the other investigated materials.
- Copyright
- © 2016, the Authors. Published by Atlantis Press.
- Open Access
- This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).
Cite this article
TY - CONF AU - Sherchenkov Alexey AU - Lazarenko Petr AU - Timoshenkov Sergey AU - Kozyukhin Sergey PY - 2016/03 DA - 2016/03 TI - Crystallization Kinetics in Ge-Sb-Te-Bi and Ge-Sb-Te-In Thin Films BT - Proceedings of the 2016 International Conference on Mechanics, Materials and Structural Engineering PB - Atlantis Press SP - 367 EP - 372 SN - 2352-5401 UR - https://doi.org/10.2991/icmmse-16.2016.62 DO - 10.2991/icmmse-16.2016.62 ID - Alexey2016/03 ER -