Electrical properties of Ge-Sb-Te-Bi Thin Films for Phase Change Memory Application
Authors
Sherchenkov Alexey, Lazarenko Petr, Terekhov Dmitriy, Kozyukhin Sergey
Corresponding Author
Sherchenkov Alexey
Available Online March 2016.
- DOI
- 10.2991/icmmse-16.2016.61How to use a DOI?
- Keywords
- Phase Change Memory, Electrical Properties, Ge-Sb-Te
- Abstract
In this study I-V characteristic, temperature dependence of resistivity, thermopower, were investigated for thin films on the basis of Ge2Sb2Te5 doped by Bi. Resistivities, ratio of the resistivities of amorphous and crystalline states, activation energies of conductivity, temperature of phase transition, Seebeck coefficient were estimated. Transport mechanisms in Ge2Sb2Te5 + Bi thin films were analyzed.
- Copyright
- © 2016, the Authors. Published by Atlantis Press.
- Open Access
- This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).
Cite this article
TY - CONF AU - Sherchenkov Alexey AU - Lazarenko Petr AU - Terekhov Dmitriy AU - Kozyukhin Sergey PY - 2016/03 DA - 2016/03 TI - Electrical properties of Ge-Sb-Te-Bi Thin Films for Phase Change Memory Application BT - Proceedings of the 2016 International Conference on Mechanics, Materials and Structural Engineering PB - Atlantis Press SP - 361 EP - 366 SN - 2352-5401 UR - https://doi.org/10.2991/icmmse-16.2016.61 DO - 10.2991/icmmse-16.2016.61 ID - Alexey2016/03 ER -