The effect of substrate temperature on chemical reactions during GaN growth in a vertical MOCVD

DOI

10.2991/icmmita-16.2016.298How to use a DOI?

Keywords

GaN; MOCVD; substrate temperature; reaction kinetics

Abstract

A model on GaN growth in a vertical MOCVD system is presented. Simulations on the GaN growth using the model are carried out under different substrate temperatures. The result shows that during the gas phase translation of the reactants, the adduct reactions decreased and the pyrolytic reactions are strengthened when the substrate temperature rises up.The growth rate of GaN is accelerated by pyrolytic reactions. When the temperature is above 800 , the etching reactions of hydrogen on GaN become obvious, which decreases the GaN growth rate. The result shows that the optimal temperature for GaN growth is about 1000 . And a comparison is made between simulation result and experimental data at 1000 , which prove the validity of the simulation.

Copyright

© 2017, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Lansheng Feng
AU  - Runqiu Guo
AU  - Jincheng Zhang
PY  - 2017/01
DA  - 2017/01
TI  - The effect of substrate temperature on chemical reactions during GaN growth in a vertical MOCVD
BT  - Proceedings of the 2016 4th International Conference on Machinery, Materials and Information Technology Applications
PB  - Atlantis Press
SP  - 1314
EP  - 1317
SN  - 2352-538X
UR  - https://doi.org/10.2991/icmmita-16.2016.298
DO  - 10.2991/icmmita-16.2016.298
ID  - Feng2017/01
ER  -