Design and Simulation of Low Noise Amplifier in Lower Frequency

DOI

10.2991/icmmita-16.2016.86How to use a DOI?

Keywords

low frequency; low noise amplifier; JFET; high gain.

Abstract

In order to amplify the output signal of an infrared detector, this paper analyzes the principle of infrared detector and noise characteristics of the amplifier circuit, and based on JFET devices and operational amplifiers a low frequency low noise amplifier is designed. The simulation shows that the gain is as high as 92 dB and the equivalent input noise voltage density within the main frequency is lower than 6.1 nV Hz. This circuit is an ideal circuit of high gain and low noise for sensors with high output impedance especially for the infrared detector..

Copyright

© 2017, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Peng Zhao
AU  - Fan Li
AU  - Jianhui Zhao
AU  - Jin Ding
PY  - 2017/01
DA  - 2017/01
TI  - Design and Simulation of Low Noise Amplifier in Lower Frequency
BT  - Proceedings of the 2016 4th International Conference on Machinery, Materials and Information Technology Applications
PB  - Atlantis Press
SP  - 465
EP  - 468
SN  - 2352-538X
UR  - https://doi.org/10.2991/icmmita-16.2016.86
DO  - 10.2991/icmmita-16.2016.86
ID  - Zhao2017/01
ER  -