The structure and electrochemical properties of BDD deposited on the Ti-substrate with Ta buffer layer
Authors
Feng Liu, Zhengran Huang, Dawei Pan, Guosheng Huang, Yonggui Yan, Xiangbo Li
Corresponding Author
Feng Liu
Available Online November 2015.
- DOI
- 10.2991/icmmita-15.2015.327How to use a DOI?
- Keywords
- MWCVD; BDD electrode; electrochemical oxidation.
- Abstract
In this paper, boron doped diamond (BDD) thin flms have been deposited on Ti-based substrates with or without a Ta intermediate layer by microwave plasma chemical vapour deposition (MWCVD). Raman spectroscopy and scanning electron microscopy (SEM) examinations demonstrate that the electrode has well-defined diamond features. XRD spectroscopy shows no TiC in the BDD film on the Ti substrate with Ta buffer layer. It is observed that both the BDD electrodes have similar overpotential 2.5V for water electrolysis prohibiting the evolution of oxygen in the cyclic voltammetry test. Further more?the removal efficiency of chemical oxygen demand (COD) approaches to 100% in the electrochemical oxidation of wastewater containing phenol.
- Copyright
- © 2015, the Authors. Published by Atlantis Press.
- Open Access
- This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).
Cite this article
TY - CONF AU - Feng Liu AU - Zhengran Huang AU - Dawei Pan AU - Guosheng Huang AU - Yonggui Yan AU - Xiangbo Li PY - 2015/11 DA - 2015/11 TI - The structure and electrochemical properties of BDD deposited on the Ti-substrate with Ta buffer layer BT - Proceedings of the 2015 3rd International Conference on Machinery, Materials and Information Technology Applications PB - Atlantis Press SP - 1758 EP - 1761 SN - 2352-538X UR - https://doi.org/10.2991/icmmita-15.2015.327 DO - 10.2991/icmmita-15.2015.327 ID - Liu2015/11 ER -