Proceedings of the 4th International Conference on Mechatronics, Materials, Chemistry and Computer Engineering 2015

Simulation of 1.0 m CMOS Baseline Process at AEMD of Shanghai Jiao Tong University

Authors
Didi Ma, Xiaodong Wang, Yun Shen, Xiulan Cheng
Corresponding Author
Didi Ma
Available Online December 2015.
DOI
https://doi.org/10.2991/icmmcce-15.2015.497How to use a DOI?
Keywords
CMOS baseline process, semiconductor device, TCAD simulation, electrical test structure, six-inch baseline run.
Abstract

A standard 1.0 m CMOS process are developed at AEMD (Center for Advanced Electronic Materials and Devices), which is a public platform about advanced micro-nano fabrication. The process supports 1.0 m twin well technology, with double poly-Si, double metal, and defines the standard process modules in the micro lab. Process and simulation data details are presented with the electrical test structure and device characterization for the first six-inch baseline run.

Copyright
© 2015, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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Volume Title
Proceedings of the 4th International Conference on Mechatronics, Materials, Chemistry and Computer Engineering 2015
Series
Advances in Computer Science Research
Publication Date
December 2015
ISBN
978-94-6252-133-9
ISSN
2352-538X
DOI
https://doi.org/10.2991/icmmcce-15.2015.497How to use a DOI?
Copyright
© 2015, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

Cite this article

TY  - CONF
AU  - Didi Ma
AU  - Xiaodong Wang
AU  - Yun Shen
AU  - Xiulan Cheng
PY  - 2015/12
DA  - 2015/12
TI  - Simulation of 1.0 m CMOS Baseline Process at AEMD of Shanghai Jiao Tong University
BT  - Proceedings of the 4th International Conference on Mechatronics, Materials, Chemistry and Computer Engineering 2015
PB  - Atlantis Press
SN  - 2352-538X
UR  - https://doi.org/10.2991/icmmcce-15.2015.497
DO  - https://doi.org/10.2991/icmmcce-15.2015.497
ID  - Ma2015/12
ER  -