Research on Dynamic Characteristics of Trench Type Bidirectional IGBT
Jia Qiang Xie, Yong Gao, Yuan Yang, Li Ma
Jia Qiang Xie
Available Online December 2015.
- https://doi.org/10.2991/icmmcce-15.2015.457How to use a DOI?
- Bidirectional IGBT, Dynamic characteristics.
- To improve the switching characteristics of conventional structure IGBT, a new trench type bidirectional insulated gate bipolar transistor (IGBT) is proposed. The main feature of this structure is introducing a cell in collector of conventional trench IGBT. The new type IGBT reduce both turn-on and turn-off losses because double-gate IGBT can accelerate carrier extraction speed. By building the device simulation DC/AC circuit of dynamic characteristics, the turn-on time is 0.12 s and turn-off time is 5.1ns. Compared with conventional IGBT, the new type IGBT’s turn-on and turn-off loss have a great reduce.
- Open Access
- This is an open access article distributed under the CC BY-NC license.
Cite this article
TY - CONF AU - Jia Qiang Xie AU - Yong Gao AU - Yuan Yang AU - Li Ma PY - 2015/12 DA - 2015/12 TI - Research on Dynamic Characteristics of Trench Type Bidirectional IGBT BT - Proceedings of the 4th International Conference on Mechatronics, Materials, Chemistry and Computer Engineering 2015 PB - Atlantis Press SP - 1029 EP - 1032 SN - 2352-538X UR - https://doi.org/10.2991/icmmcce-15.2015.457 DO - https://doi.org/10.2991/icmmcce-15.2015.457 ID - Xie2015/12 ER -