Proceedings of the 4th International Conference on Mechatronics, Materials, Chemistry and Computer Engineering 2015

Research on Dynamic Characteristics of Trench Type Bidirectional IGBT

Authors
Jia Qiang Xie, Yong Gao, Yuan Yang, Li Ma
Corresponding Author
Jia Qiang Xie
Available Online December 2015.
DOI
https://doi.org/10.2991/icmmcce-15.2015.457How to use a DOI?
Keywords
Bidirectional IGBT, Dynamic characteristics.
Abstract
To improve the switching characteristics of conventional structure IGBT, a new trench type bidirectional insulated gate bipolar transistor (IGBT) is proposed. The main feature of this structure is introducing a cell in collector of conventional trench IGBT. The new type IGBT reduce both turn-on and turn-off losses because double-gate IGBT can accelerate carrier extraction speed. By building the device simulation DC/AC circuit of dynamic characteristics, the turn-on time is 0.12 s and turn-off time is 5.1ns. Compared with conventional IGBT, the new type IGBT’s turn-on and turn-off loss have a great reduce.
Open Access
This is an open access article distributed under the CC BY-NC license.

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Cite this article

TY  - CONF
AU  - Jia Qiang Xie
AU  - Yong Gao
AU  - Yuan Yang
AU  - Li Ma
PY  - 2015/12
DA  - 2015/12
TI  - Research on Dynamic Characteristics of Trench Type Bidirectional IGBT
BT  - Proceedings of the 4th International Conference on Mechatronics, Materials, Chemistry and Computer Engineering 2015
PB  - Atlantis Press
SP  - 1029
EP  - 1032
SN  - 2352-538X
UR  - https://doi.org/10.2991/icmmcce-15.2015.457
DO  - https://doi.org/10.2991/icmmcce-15.2015.457
ID  - Xie2015/12
ER  -