Proceedings of the 4th International Conference on Mechatronics, Materials, Chemistry and Computer Engineering 2015

Research of new structure super fast recovery power diode

Authors
Li Ma, Linnan Chen, Yong Gao
Corresponding Author
Li Ma
Available Online December 2015.
DOI
https://doi.org/10.2991/icmmcce-15.2015.456How to use a DOI?
Keywords
fast recovery diode, reverse recovery, device modeling.
Abstract
This study aims to greatly improve the reverse recovery characteristics of the fast recovery diode by changing the diode structure. Through adjusting the doping concentration, thickness and width of anode p area and considering its impact on device characteristics, it effectively reduces the reverse recovery current peak and reverse recovery time. Therefore, it can better meet requirements of soft quick recovery, high breakdown voltage performance of the power diode which are applied in high frequency, power electronic circuits.
Open Access
This is an open access article distributed under the CC BY-NC license.

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Cite this article

TY  - CONF
AU  - Li Ma
AU  - Linnan Chen
AU  - Yong Gao
PY  - 2015/12
DA  - 2015/12
TI  - Research of new structure super fast recovery power diode
BT  - Proceedings of the 4th International Conference on Mechatronics, Materials, Chemistry and Computer Engineering 2015
PB  - Atlantis Press
SP  - 1038
EP  - 1042
SN  - 2352-538X
UR  - https://doi.org/10.2991/icmmcce-15.2015.456
DO  - https://doi.org/10.2991/icmmcce-15.2015.456
ID  - Ma2015/12
ER  -