Research of new structure super fast recovery power diode
Li Ma, Linnan Chen, Yong Gao
Available Online December 2015.
- https://doi.org/10.2991/icmmcce-15.2015.456How to use a DOI?
- fast recovery diode, reverse recovery, device modeling.
- This study aims to greatly improve the reverse recovery characteristics of the fast recovery diode by changing the diode structure. Through adjusting the doping concentration, thickness and width of anode p area and considering its impact on device characteristics, it effectively reduces the reverse recovery current peak and reverse recovery time. Therefore, it can better meet requirements of soft quick recovery, high breakdown voltage performance of the power diode which are applied in high frequency, power electronic circuits.
- Open Access
- This is an open access article distributed under the CC BY-NC license.
Cite this article
TY - CONF AU - Li Ma AU - Linnan Chen AU - Yong Gao PY - 2015/12 DA - 2015/12 TI - Research of new structure super fast recovery power diode BT - Proceedings of the 4th International Conference on Mechatronics, Materials, Chemistry and Computer Engineering 2015 PB - Atlantis Press SP - 1038 EP - 1042 SN - 2352-538X UR - https://doi.org/10.2991/icmmcce-15.2015.456 DO - https://doi.org/10.2991/icmmcce-15.2015.456 ID - Ma2015/12 ER -