The Research on over current switch-off simulation of IGBT level in parallel connection
Ge Zhao, Mingchao Gao, Yaohua Wang, Jiang Liu, Rui Jin, Jialiang Wen
Available Online April 2016.
- https://doi.org/10.2991/icmit-16.2016.4How to use a DOI?
- IGBT;Parallel Connection;Switch-Off;RBSOA;Simulation; Over Current
- IGBT chips are basic structure of power electronic devices in the power grid system. The IGBT module with high current capability needs multi chips parallel connection. Because there are different performance parameters of the IGBT chips in the Wafer, it is necessary to select the parameters of the IGBT chips for the IGBT modules to make the performance parameters of chips as consistent as possible. However, it is unknown that what the influence of performance parameter differences between IGBT chips on the overall performance of the module such as IGBT modules' switch-off and RBSOA characteristics is. In addition, switching state of each single IGBT chip is not monitored when the whole module is on working state. This paper is trying to demonstrate a method to research the multi parallel chips on the performance of different parameters effects of each single IGBT chip switch-off Process, which is based on the T-CAD software tool.
- Open Access
- This is an open access article distributed under the CC BY-NC license.
Cite this article
TY - CONF AU - Ge Zhao AU - Mingchao Gao AU - Yaohua Wang AU - Jiang Liu AU - Rui Jin AU - Jialiang Wen PY - 2016/04 DA - 2016/04 TI - The Research on over current switch-off simulation of IGBT level in parallel connection BT - 2016 3rd International Conference on Mechatronics and Information Technology PB - Atlantis Press SP - 18 EP - 21 SN - 2352-538X UR - https://doi.org/10.2991/icmit-16.2016.4 DO - https://doi.org/10.2991/icmit-16.2016.4 ID - Zhao2016/04 ER -