A design of IGBT with the hole current bypass structure
Ge Zhao, Yaohua Wang, Mingchao Gao, Jiang Liu, Rui Jin, Jialiang Wen
Available Online April 2016.
- https://doi.org/10.2991/icmit-16.2016.3How to use a DOI?
- IGBT; Hole current bypass; Ballast resistance; N Plus; Latch-up
- IGBTs modules have the characteristics widely used in industry, electric power, smart grid and other fields. But the IGBTs modules in the current working state, the device performance and reliability are facing severe challenges. This paper provides a new design of forming hole current bypass and integrated emitter ballast resistance structure by adjusting N+ region of the IGBT's MOSFET component structure , To improve the IGBT chip Latch-up problem and N Plus chip, the emitter current is more uniform.
- Open Access
- This is an open access article distributed under the CC BY-NC license.
Cite this article
TY - CONF AU - Ge Zhao AU - Yaohua Wang AU - Mingchao Gao AU - Jiang Liu AU - Rui Jin AU - Jialiang Wen PY - 2016/04 DA - 2016/04 TI - A design of IGBT with the hole current bypass structure BT - 2016 3rd International Conference on Mechatronics and Information Technology PB - Atlantis Press SN - 2352-538X UR - https://doi.org/10.2991/icmit-16.2016.3 DO - https://doi.org/10.2991/icmit-16.2016.3 ID - Zhao2016/04 ER -