Proceedings of the 2016 3rd International Conference on Mechatronics and Information Technology

A design of IGBT with the hole current bypass structure

Authors
Ge Zhao, Yaohua Wang, Mingchao Gao, Jiang Liu, Rui Jin, Jialiang Wen
Corresponding Author
Ge Zhao
Available Online April 2016.
DOI
https://doi.org/10.2991/icmit-16.2016.3How to use a DOI?
Keywords
IGBT; Hole current bypass; Ballast resistance; N Plus; Latch-up
Abstract
IGBTs modules have the characteristics widely used in industry, electric power, smart grid and other fields. But the IGBTs modules in the current working state, the device performance and reliability are facing severe challenges. This paper provides a new design of forming hole current bypass and integrated emitter ballast resistance structure by adjusting N+ region of the IGBT's MOSFET component structure , To improve the IGBT chip Latch-up problem and N Plus chip, the emitter current is more uniform.
Open Access
This is an open access article distributed under the CC BY-NC license.

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Proceedings
2016 3rd International Conference on Mechatronics and Information Technology
Part of series
Advances in Computer Science Research
Publication Date
April 2016
ISBN
978-94-6252-184-1
ISSN
2352-538X
DOI
https://doi.org/10.2991/icmit-16.2016.3How to use a DOI?
Open Access
This is an open access article distributed under the CC BY-NC license.

Cite this article

TY  - CONF
AU  - Ge Zhao
AU  - Yaohua Wang
AU  - Mingchao Gao
AU  - Jiang Liu
AU  - Rui Jin
AU  - Jialiang Wen
PY  - 2016/04
DA  - 2016/04
TI  - A design of IGBT with the hole current bypass structure
BT  - 2016 3rd International Conference on Mechatronics and Information Technology
PB  - Atlantis Press
SN  - 2352-538X
UR  - https://doi.org/10.2991/icmit-16.2016.3
DO  - https://doi.org/10.2991/icmit-16.2016.3
ID  - Zhao2016/04
ER  -