Proceedings of the 3rd International Conference on Mechatronics and Industrial Informatics

Research Of Piezo-resistive And Piezoelectric Sensor

Authors
Sanming Feng, Wenjie Tian, Bo Ma
Corresponding Author
Sanming Feng
Available Online October 2015.
DOI
10.2991/icmii-15.2015.144How to use a DOI?
Keywords
pressure sensor; tantalum nitride; PVDF; circuit
Abstract

The basic principle and application of piezo-resistive and piezoelectric are expounded. Also the method of deposition of tantalum nitride on the glass to fabricate piezo-resistive pressure sensor, and the method of a plurality of piezoelectric thin film in parallel to form a high sensitivity sensor are introduced. Besides, a power supply circuit and corresponding processing circuit are designed. The output voltage of the piezo-resistive pressure sensor is liner with respect to the pressure. The output of the charge is liner with the pressure of piezoelectric sensor first, then tends to saturation and presents less change. The sensitivity of piezoelectric sensor is up to 103 orders of magnitude, with a higher sensitivity.

Copyright
© 2015, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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Volume Title
Proceedings of the 3rd International Conference on Mechatronics and Industrial Informatics
Series
Advances in Computer Science Research
Publication Date
October 2015
ISBN
10.2991/icmii-15.2015.144
ISSN
2352-538X
DOI
10.2991/icmii-15.2015.144How to use a DOI?
Copyright
© 2015, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

Cite this article

TY  - CONF
AU  - Sanming Feng
AU  - Wenjie Tian
AU  - Bo Ma
PY  - 2015/10
DA  - 2015/10
TI  - Research Of Piezo-resistive And Piezoelectric Sensor
BT  - Proceedings of the 3rd International Conference on Mechatronics and Industrial Informatics
PB  - Atlantis Press
SP  - 829
EP  - 834
SN  - 2352-538X
UR  - https://doi.org/10.2991/icmii-15.2015.144
DO  - 10.2991/icmii-15.2015.144
ID  - Feng2015/10
ER  -