Improved Clival Gate 4H-SiC MESFET with Recessed Drain Drift Region and Recessed P-Buffer Layer

DOI

10.2991/iceem-15.2015.11How to use a DOI?

Keywords

component; 4H-SiC MESFET; DC characteristics; RF characteristics

Abstract

An improved clival gate 4H-SiC MESFET with recessed drain drift region and recessed p-buffer layer (RDRP-CG MESFET) was proposed in this paper. The key improvement in this paper is the enhancement of the drain current and the breakdown voltage. The recessed drain drift region and recessed p-buffer layer are introduced in the proposed structure to ensure the rise of the drain current and the breakdown voltage simultaneously. DC and RF characteristics are simulated and compared to the clival gate 4H-SiC MESFET (CG MESFET). The numerical simulated results show that the breakdown voltage is 116.3V compared to 76.6V of CG MESFET, which is about 51.8% larger than that of CG MESFET. There is an 11.9% increase in drain saturation current of RDRP-CG MESFET compared with CG MESFET. Thus, the maximum output power density is about 70% larger than that of CG MESFET, which is due to the increase in drain saturation current and breakdown voltage. There is a slight decrease in cut-off frequency in the proposed structure.

Copyright

© 2015, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Hujun Jia
AU  - Peimiao Ma
AU  - Yehui Luo
AU  - Ding Xing
AU  - Hang Zhang
AU  - Zhijiao Wang
AU  - Qiuyuan Wu
PY  - 2015/12
DA  - 2015/12
TI  - Improved Clival Gate 4H-SiC MESFET with Recessed Drain Drift Region and Recessed P-Buffer Layer
BT  - Proceedings of the 2015 International Conference on Electrical, Electronics and Mechatronics
PB  - Atlantis Press
SP  - 44
EP  - 47
SN  - 2352-5401
UR  - https://doi.org/10.2991/iceem-15.2015.11
DO  - 10.2991/iceem-15.2015.11
ID  - Jia2015/12
ER  -