Study on the novel double-gate tunneling field-effect transistor with InAs source

DOI

10.2991/iccmcee-15.2015.280How to use a DOI?

Keywords

TFET, InAs, drive current, ION/IOFF ratio, ambipolar behavior, SS.

Abstract

Tunneling field effect transistor(TFET) suffers from low drive current along with severe ambipolar behavior. To resolve these bottleneck issues, a novel double gate tunneling field effect transistor with InAs source(InAsDGTFET) is proposed in this paper. By optimizing the proposed device parameters, drive current can be achieved as high as 1.09×10-3A/ m, and ratio is 1010 that far more than 106. Additionally, the sub-threshold swing(SS) of 30mV/decade is gained which breakthrough the limitation of 60mV/decade that MOSFET suffers. Also, variations in source, drain and channel doping concentrations, gate work function and silicon film thickness are investigated. It is found that the device threshold voltage( ), SS, ambipolar behavior issue and drive current is more sensitive to these parameters variation.

Copyright

© 2015, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - YueHua Dai
AU  - Ning Li
AU  - Zhen Chen
AU  - Bo Jin
PY  - 2015/11
DA  - 2015/11
TI  - Study on the novel double-gate tunneling field-effect transistor with InAs source
BT  - Proceedings of the 2015 4th International Conference on Computer, Mechatronics, Control and Electronic Engineering
PB  - Atlantis Press
SP  - 1486
EP  - 1493
SN  - 2352-5401
UR  - https://doi.org/10.2991/iccmcee-15.2015.280
DO  - 10.2991/iccmcee-15.2015.280
ID  - Dai2015/11
ER  -