Study on the novel double-gate tunneling field-effect transistor with InAs source
- 10.2991/iccmcee-15.2015.280How to use a DOI?
- TFET, InAs, drive current, ION/IOFF ratio, ambipolar behavior, SS.
Tunneling field effect transistor(TFET) suffers from low drive current along with severe ambipolar behavior. To resolve these bottleneck issues, a novel double gate tunneling field effect transistor with InAs source(InAsDGTFET) is proposed in this paper. By optimizing the proposed device parameters, drive current can be achieved as high as 1.09×10-3A/ m, and ratio is 1010 that far more than 106. Additionally, the sub-threshold swing(SS) of 30mV/decade is gained which breakthrough the limitation of 60mV/decade that MOSFET suffers. Also, variations in source, drain and channel doping concentrations, gate work function and silicon film thickness are investigated. It is found that the device threshold voltage( ), SS, ambipolar behavior issue and drive current is more sensitive to these parameters variation.
- © 2015, the Authors. Published by Atlantis Press.
- Open Access
- This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).
Cite this article
TY - CONF AU - YueHua Dai AU - Ning Li AU - Zhen Chen AU - Bo Jin PY - 2015/11 DA - 2015/11 TI - Study on the novel double-gate tunneling field-effect transistor with InAs source BT - Proceedings of the 2015 4th International Conference on Computer, Mechatronics, Control and Electronic Engineering PB - Atlantis Press SP - 1486 EP - 1493 SN - 2352-5401 UR - https://doi.org/10.2991/iccmcee-15.2015.280 DO - 10.2991/iccmcee-15.2015.280 ID - Dai2015/11 ER -