Preparation of Ni-Mn-Zn ferrite films on CeO2/YSZ-buffered Si substrate
- https://doi.org/10.2991/iccia.2012.152How to use a DOI?
- ferrite, CeO2/YSZ buffer, pulsed laser deposition
Ni-Mn-Zn ferrite films were deposited on Si substrate with CeO2/YSZ(YSZ:yttria-stabilized ZrO2) buffer layer by pulsed laser deposition(PLD). The effect of CeO2/YSZ buffer layer on the Ni-Mn-Zn ferrite film was studied by XRD, SEM and VSM. The results revealed that the CeO2/YSZ buffer layer can improve the films crystallinity, smooth the roughness of film, reduce the film crack and lead to a homogeneous microstructure. The saturation magnetization (Ms) higher than 240 emu/cm3 can be obtained. It also found annealing process can improve the film crystallinity and the magnetic properties, decrease the coercivity (Hc).
- © 2013, the Authors. Published by Atlantis Press.
- Open Access
- This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).
Cite this article
TY - CONF AU - Yiqing Yang AU - Liang Zheng AU - Hui Zheng AU - Xuefei Yan PY - 2014/05 DA - 2014/05 TI - Preparation of Ni-Mn-Zn ferrite films on CeO2/YSZ-buffered Si substrate BT - Proceedings of the 2012 2nd International Conference on Computer and Information Application (ICCIA 2012) PB - Atlantis Press SP - 631 EP - 633 SN - 1951-6851 UR - https://doi.org/10.2991/iccia.2012.152 DO - https://doi.org/10.2991/iccia.2012.152 ID - Yang2014/05 ER -