Effect of Femtosecond Irradiation Laser on the Optical Properties of GaAs Solar Cell
- 10.2991/icaemt-15.2015.31How to use a DOI?
- Femtosecond laser; Solar cell; Damage threshold; TiO2/SiO2 film.
The results of damage on the GaAs solar cells surface irradiated by femtosecond laser show that: the anti-reflective layer irradiated by laser is damaged when the laser energy is more than 1 uJ; and when the energy is increased to 5uJ, the anti-reflective layer is completely damaged. The comparison between theoretical damage depth and the experimental results reveal that: similarity between the theoretical calculation and experimental results is high when the laser energy is less than 6 uJ. There is no obvious change of the reflectance after irradiated by 1 uJ pulse energy which is about 8%, but it is increased to 32%, 38% after the pulse energy is increased to the 2 uJ and 3 uJ. The quantum efficiency are decreased to 13.71%, 55.78%, 83.01% at 500 nm and 3.94%, 35.52%, 46.78% at 800 nm when the cells are irradiated at 1 J, 2 J, 3 J.
- © 2015, the Authors. Published by Atlantis Press.
- Open Access
- This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).
Cite this article
TY - CONF AU - Ruifang Chen AU - Zhiguo Shi AU - Yunxia Ye AU - Xue Qing AU - Yinqun Hua PY - 2015/08 DA - 2015/08 TI - Effect of Femtosecond Irradiation Laser on the Optical Properties of GaAs Solar Cell BT - Proceedings of the 2015 International Conference on Advanced Engineering Materials and Technology PB - Atlantis Press SP - 157 EP - 165 SN - 2352-5401 UR - https://doi.org/10.2991/icaemt-15.2015.31 DO - 10.2991/icaemt-15.2015.31 ID - Chen2015/08 ER -