Temperature Dependence of Microwave Dielectric Properties of SiO2 /BN Composite

DOI

10.2991/icadme-15.2015.116How to use a DOI?

Keywords

GEM equation, dielectric constant ,temperature, composite

Abstract

In this presentation, the dielectric properties of SiO2 / BN composite is studied using the the logarithmic rule in the GEM equation.It is found that the dielectric constant of the composite material is effected by the contens of Si2N2O and temperature. And because the dielectric constant of SiO2 is smaller and its variation is more stable, so when the content of BN is not high, the dielectric constant of SiO2 / BN is lower and more stable. Also, it is found that the influence of frequency on the dielectric constant of the composite is relatively small, while its influence on the dielectric loss is more obvious, and when the temperature is relatively low, the influence is bigger, which is related to a bigger relaxation loss phase at a low temperature.

Copyright

© 2015, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Ting Zhang
AU  - Chen Tao
PY  - 2015/10
DA  - 2015/10
TI  - Temperature Dependence of Microwave Dielectric Properties of SiO2 /BN Composite
BT  - Proceedings of the 5th International Conference on Advanced Design and Manufacturing Engineering
PB  - Atlantis Press
SP  - 575
EP  - 578
SN  - 2352-5401
UR  - https://doi.org/10.2991/icadme-15.2015.116
DO  - 10.2991/icadme-15.2015.116
ID  - Zhang2015/10
ER  -