Thin HfSiN Films prepared by Magnetron Sputtering
Zaiyu Zhang, Yilong Liang, Xianbang Jiang
Available Online October 2015.
- 10.2991/icadme-15.2015.74How to use a DOI?
- HfSiN thin films; magnetic sputtering; HfSiN/Cu/HfSiN/SiO2/Si
HfSiN thin films were prepared by the solid solution of HfN and SiN precursor films through magnetron sputtering. The obtained films were characterized using X-ray diffraction (XRD) and scanning electron microscopy (SEM). X-ray diffraction(XRD) measurements show that the films have amorphous structure in the as-deposited state. Scanning electronic microscopy (SEM) images show that crystalline grain size of the films increases with the annealing temperature. The results show that the resistivity and the components of the HfSiN/Cu/ HfSiN/SiO2/Si film do not have obvious change after being annealing at 550 in oxygen, and the HfSiN film can provide good barrier performance for copper wire.
- © 2015, the Authors. Published by Atlantis Press.
- Open Access
- This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).
Cite this article
TY - CONF AU - Zaiyu Zhang AU - Yilong Liang AU - Xianbang Jiang PY - 2015/10 DA - 2015/10 TI - Thin HfSiN Films prepared by Magnetron Sputtering BT - Proceedings of the 5th International Conference on Advanced Design and Manufacturing Engineering PB - Atlantis Press SP - 371 EP - 374 SN - 2352-5401 UR - https://doi.org/10.2991/icadme-15.2015.74 DO - 10.2991/icadme-15.2015.74 ID - Zhang2015/10 ER -