Proceedings of the 2017 5th International Conference on Frontiers of Manufacturing Science and Measuring Technology (FMSMT 2017)

An SEU Hardened 65nm/4T-SRAM Cell for High Reliable Space Applications

Authors
Wendi Zhang, Liyang Pan
Corresponding Author
Wendi Zhang
Available Online April 2017.
DOI
10.2991/fmsmt-17.2017.126How to use a DOI?
Keywords
SEU, High reliable space
Abstract

A novel mono-stable 4T-SRAM cell is proposed in this paper. The cell is designed in 65nm LPCMOS process and simulated to find out the linear energy transfer threshold of SEU. T-CAD simulation results show that its LETth for data(1) is up to 41.6 MeV/mg/cm2, almost the same as DICE, and the data error rate can be reduce to 1.2ž10-11/bit.day with a particular duplication redundancy SRAM structure. The proposed 4T cell takes advantage of small cell size and solid anit-SEU ability, showing good potential to be used in SEU hardened SRAM.

Copyright
© 2017, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

Download article (PDF)

Volume Title
Proceedings of the 2017 5th International Conference on Frontiers of Manufacturing Science and Measuring Technology (FMSMT 2017)
Series
Advances in Engineering Research
Publication Date
April 2017
ISBN
978-94-6252-331-9
ISSN
2352-5401
DOI
10.2991/fmsmt-17.2017.126How to use a DOI?
Copyright
© 2017, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

Cite this article

TY  - CONF
AU  - Wendi Zhang
AU  - Liyang Pan
PY  - 2017/04
DA  - 2017/04
TI  - An SEU Hardened 65nm/4T-SRAM Cell for High Reliable Space Applications
BT  - Proceedings of the 2017 5th International Conference on Frontiers of Manufacturing Science and Measuring Technology (FMSMT 2017)
PB  - Atlantis Press
SP  - 635
EP  - 638
SN  - 2352-5401
UR  - https://doi.org/10.2991/fmsmt-17.2017.126
DO  - 10.2991/fmsmt-17.2017.126
ID  - Zhang2017/04
ER  -