Excellent Schottky Characteristics of Indium-tin-oxide Contact to n-type GaN

DOI

10.2991/cmes-15.2015.188How to use a DOI?

Keywords

indium tin oxide, Schottky contact, thermal annealing, thermionic field emission.

Abstract

Excellent Schottky characteristics of indium-tin-oxide (ITO) contact formed on n-type GaN (n-GaN) were demonstrated. The post-thermal annealing of ITO contact sputtered on n-GaN led to a significant improvement in the Schottky characteristics, particularly pronounced in the air ambient than nitrogen ambient, e.g., the rectification ratio (measured at ± 1.0 V) was increased from 4.9 to 4240 after an optimized post-thermal annealing. Thermionic field emission model applied to the forward current-voltage curves of the ITO/n-GaN Schottky diodes also exhibited that the Schottky barrier height could be as high as 0.93 eV. The observed excellent Schottky characteristics with post-thermal annealing are attributed to the improved ITO crystallinity as verified by glancing X-ray diffraction method

Copyright

© 2015, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Kyurin Kim
AU  - Youngun Gil
AU  - Hyunsoo Kim
PY  - 2015/04
DA  - 2015/04
TI  - Excellent Schottky Characteristics of Indium-tin-oxide Contact to n-type GaN
BT  - Proceedings of the 2nd International Conference on Civil, Materials and Environmental Sciences
PB  - Atlantis Press
SP  - 699
EP  - 702
SN  - 2352-5401
UR  - https://doi.org/10.2991/cmes-15.2015.188
DO  - 10.2991/cmes-15.2015.188
ID  - Kim2015/04
ER  -