Proceedings of the International Conference on Communication and Electronic Information Engineering (CEIE 2016)

Modulation Performance of Blue Ingan Light-Emitting Diodes with P-Type Electron-Blocking Layer and N-Type Hole-Blocking Layer

Authors
Guichu Chen, Zhaoxiong Zhao
Corresponding Author
Guichu Chen
Available Online October 2016.
DOI
10.2991/ceie-16.2017.65How to use a DOI?
Keywords
LED; Modulation Speed; EBL; HBL
Abstract

We have fabricated two blue light-emitting diodes (LEDs) samples with p-type electron-blocking Layer and n-type hole-blocking Layer for the modulation speed measurement. The experimental results show HBL can improve the modulation speed better for blue LED. The energy bands and recombination rates of both LEDs are investigated numerically within the APSYS software. The superior speed performance of LED with HBL can be attributed to its higher electron/hole recombination rate, which is verified by the simulation.

Copyright
© 2017, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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Volume Title
Proceedings of the International Conference on Communication and Electronic Information Engineering (CEIE 2016)
Series
Advances in Engineering Research
Publication Date
October 2016
ISBN
10.2991/ceie-16.2017.65
ISSN
2352-5401
DOI
10.2991/ceie-16.2017.65How to use a DOI?
Copyright
© 2017, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

Cite this article

TY  - CONF
AU  - Guichu Chen
AU  - Zhaoxiong Zhao
PY  - 2016/10
DA  - 2016/10
TI  - Modulation Performance of Blue Ingan Light-Emitting Diodes with P-Type Electron-Blocking Layer and N-Type Hole-Blocking Layer
BT  - Proceedings of the International Conference on Communication and Electronic Information Engineering (CEIE 2016)
PB  - Atlantis Press
SP  - 516
EP  - 521
SN  - 2352-5401
UR  - https://doi.org/10.2991/ceie-16.2017.65
DO  - 10.2991/ceie-16.2017.65
ID  - Chen2016/10
ER  -