Multi-Parameter Fluctuation Effects on InGaAsP/InP Geiger-Mode Avalanche Photodiodes
Qian Dai, Jie Deng, Zhu Shi, Li-bo Yu, Hai-zhi Song
Available Online December 2015.
- 10.2991/jimet-15.2015.179How to use a DOI?
- Optoelectronic device, avalanche photodiode, single photon avalanche diode.
For Geiger-mode avalanche photodiodes, a statistical method is advanced to establish the quantitative correlation between the controllability of structure parameters and the homogeneity of device properties. Setting many parameters fluctuating independently and simultaneously, the collective effect of multi-parameters can be straightly obtained. For a typical InGaAsP/InP singlephoton avalanche diode, it is seen that device homogeneity with excess bias fluctuation within 50% requires uncertainty in layer thickness and doping level better than ~3%.
- © 2015, the Authors. Published by Atlantis Press.
- Open Access
- This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).
Cite this article
TY - CONF AU - Qian Dai AU - Jie Deng AU - Zhu Shi AU - Li-bo Yu AU - Hai-zhi Song PY - 2015/12 DA - 2015/12 TI - Multi-Parameter Fluctuation Effects on InGaAsP/InP Geiger-Mode Avalanche Photodiodes BT - Proceedings of the 2015 Joint International Mechanical, Electronic and Information Technology Conference PB - Atlantis Press SP - 963 EP - 966 SN - 2352-538X UR - https://doi.org/10.2991/jimet-15.2015.179 DO - 10.2991/jimet-15.2015.179 ID - Dai2015/12 ER -