Production of Single Crystals, Films and Characteristics of Schottky Diodes Based on 4H-SIC and its Solid Solutions

DOI

10.2991/isees-19.2019.50How to use a DOI?

Keywords

silicon carbide monocrystals; production of thin films; Schottky barrier height; SiC-AlN-based CVC diodes; sublimation; SiC-AlN solid solutions.

Abstract

The article deals with the methods for producing silicon carbide (4H-SiC) mono-crystals and films using the Schottky barrier. A nonlinear model of the Schottky barrier height and a composite model for the CVC of the total emission current were developed. An induction heating method for producing SiC monocrystals at 2000-250000С was developed. On the basis of the full-scale model of this method, a patented unit for producing perfect SiC monocrystals was designed [1]. Models of thin SiC film growth were analyzed.

Copyright

© 2019, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - V.I. Altukhov
AU  - O.A. Mityugova
AU  - A.V. Sankin
AU  - V.F. Antonov
AU  - G.D. Kardashov
AU  - A.T. Rostova
AU  - S.V. Filippova
PY  - 2019/08
DA  - 2019/08
TI  - Production of Single Crystals, Films and Characteristics of Schottky Diodes Based on 4H-SIC and its Solid Solutions
BT  - Proceedings of the International Symposium "Engineering and Earth Sciences: Applied and Fundamental Research" dedicated to the 85th anniversary of H.I. Ibragimov (ISEES 2019)
PB  - Atlantis Press
SP  - 566
EP  - 570
SN  - 2590-3217
UR  - https://doi.org/10.2991/isees-19.2019.50
DO  - 10.2991/isees-19.2019.50
ID  - Altukhov2019/08
ER  -