3D simulations of new low capacitance silicon pixel detectors

DOI

10.2991/ifmeita-17.2018.98How to use a DOI?

Keywords

Low capacitance, signal to noise ratio, depletion voltage, the newly designed detector.

Abstract

We propose a novel electrode structure that reduces the detector capacitance by employing a metal electrode with much reduced area as compared to the detector sensitive area. We found that by doing so, the full depletion voltage of the detector will increase due to the added lateral depletion between open areas of the same electrode. Therefore, this paper aims to optimize the performance of the detector by designing a reasonable electrode shape, weighing the relationship between capacitance and the required depletion voltage. Then, we compare the capacitance by simulating in detail the newly designed detector and compare with that in a traditional detector using a Silvaco TCAD simulation tool. And we show the depletion voltage, potential and electric field of two critical cross-sections of the newly designed detector.

Copyright

© 2018, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Qiang Long
AU  - Qinwen Guo
AU  - Zhongliang Long
AU  - Zheng Li
PY  - 2018/02
DA  - 2018/02
TI  - 3D simulations of new low capacitance silicon pixel detectors
BT  - Proceedings of the 2nd International Forum on Management, Education and Information Technology Application (IFMEITA 2017)
PB  - Atlantis Press
SP  - 566
EP  - 569
SN  - 2352-5398
UR  - https://doi.org/10.2991/ifmeita-17.2018.98
DO  - 10.2991/ifmeita-17.2018.98
ID  - Long2018/02
ER  -