Strain Membrane Design of SOI Pressure Sensor

DOI

10.2991/ifmeita-17.2018.93How to use a DOI?

Keywords

SOI pressure sensor; the strain membrane; the pressure sensitive resistance; sensitivity;

Abstract

The SOI pressure sensor is a new high temperature pressure sensor made of SOI materials. The sensitivity of the SOI pressure sensor is determined by the design of the strain membrane and the pressure sensitive resistance. In this paper, the optimal size and thickness of the strain membrane, and the position of the doped pressure sensitive resistor are obtained by analyzing simulation results of chip strain membranes with the different sizes using a simulation tool ANSYS. These results can provide an important scientific basis to the SOI pressure sensor chip design.

Copyright

© 2018, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Jun. Zhao
AU  - Zhi.Jun. Yao
AU  - Zheng. Li
PY  - 2018/02
DA  - 2018/02
TI  - Strain Membrane Design of SOI Pressure Sensor
BT  - Proceedings of the 2nd International Forum on Management, Education and Information Technology Application (IFMEITA 2017)
PB  - Atlantis Press
SP  - 537
EP  - 541
SN  - 2352-5398
UR  - https://doi.org/10.2991/ifmeita-17.2018.93
DO  - 10.2991/ifmeita-17.2018.93
ID  - Zhao2018/02
ER  -